{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607989","patent":{"patent_number":"US-9607989","title":"Forming self-aligned NiSi placement with improved performance and yield","assignee":null,"inventors":[],"filing_date":"2014-12-04T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Methods for forming a trench silicide without gouging the silicon source/drain regions and the resulting devices are disclosed. Embodiments include forming first and second dummy gates, each with spacers at opposite sides thereof, on a substrate; forming eSiGe source/drain regions at opposite sides of the first dummy gate; forming raised source/drain regions at opposite sides of the second dummy gate; forming a silicon cap on each of the eSiGe and raised source/drain regions; forming an ILD over and between the first and second dummy gates; replacing the first and second dummy gates with first and second HKMG, respectively; forming a contact trench through the ILD into the silicon cap over each of the eSiGe and raised source/drain regions; and forming a silicide over the eSiGe and raised source/drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming self-aligned NiSi placement with improved performance and yield","description":"Methods for forming a trench silicide without gouging the silicon source/drain regions and the resulting devices are disclosed. Embodiments include forming first and second dummy gates, each with spac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607989","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607989","citation_suggestion":"Patentable. \"Forming self-aligned NiSi placement with improved performance and yield\" (US-9607989). https://patentable.app/patents/US-9607989","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607989","json":"https://patentable.app/api/llm-context/US-9607989","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:35:36.037Z"}