{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9607996","patent":{"patent_number":"US-9607996","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-08-15T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["G02F","G09G","G09G","G09G","G09G"],"num_claims":16,"abstract":"A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg. The memory transistor (10A) includes a gate electrode (3), a metal oxide layer (7), a gate insulating film (5), and source and drain electrodes. The drain electrode (9d) has a multilayer structure which includes a first drain metal layer (9d1) and a second drain metal layer (9d2), the first drain metal layer (9d1) being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer (9d2) being made of a second metal whose melting point is lower than that of the first metal. Part P of the drain electrode 9d extends over both the metal oxide layer (7) and the gate electrode (3) when viewed in a direction normal to a surface of the substrate. The part (P) of the drain electrode (9d) includes the first drain metal layer (9d1) and does not include the second drain metal layer (9d2)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor sta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9607996","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9607996","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9607996). https://patentable.app/patents/US-9607996","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9607996","json":"https://patentable.app/api/llm-context/US-9607996","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:23:43.983Z"}