{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608038","patent":{"patent_number":"US-9608038","title":"Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer","assignee":null,"inventors":[],"filing_date":"2016-06-06T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["G11C","B82Y"],"num_claims":20,"abstract":"The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction that is opposite to the first invariable magnetization direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer","description":"The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MT","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608038","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608038","citation_suggestion":"Patentable. \"Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer\" (US-9608038). https://patentable.app/patents/US-9608038","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608038","json":"https://patentable.app/api/llm-context/US-9608038","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:36:05.258Z"}