{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608055","patent":{"patent_number":"US-9608055","title":"Semiconductor device having germanium active layer with underlying diffusion barrier layer","assignee":null,"inventors":[],"filing_date":"2011-12-23T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":18,"abstract":"Semiconductor devices having germanium active layers with underlying diffusion barrier layers are described. For example, a semiconductor device includes a gate electrode stack disposed above a substrate. A germanium active layer is disposed above the substrate, underneath the gate electrode stack. A diffusion barrier layer is disposed above the substrate, below the germanium active layer. A junction leakage suppression layer is disposed above the substrate, below the diffusion barrier layer. Source and drain regions are disposed above the junction leakage suppression layer, on either side of the gate electrode stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having germanium active layer with underlying diffusion barrier layer","description":"Semiconductor devices having germanium active layers with underlying diffusion barrier layers are described. For example, a semiconductor device includes a gate electrode stack disposed above a substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608055","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608055","citation_suggestion":"Patentable. \"Semiconductor device having germanium active layer with underlying diffusion barrier layer\" (US-9608055). https://patentable.app/patents/US-9608055","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608055","json":"https://patentable.app/api/llm-context/US-9608055","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:58:48.548Z"}