{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608061","patent":{"patent_number":"US-9608061","title":"Fin field-effct transistors","assignee":null,"inventors":[],"filing_date":"2016-05-18T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the semiconductor substrate. The method also includes forming dummy gates formed over side and top surfaces of the fins; forming a precursor material layer with a surface higher than top surfaces of the fins to cover the dummy gates and the semiconductor substrate; performing a thermal annealing process to convert the precursor material layer into a dielectric layer having a plurality of voids; and planarizing the dielectric layer to expose the top surfaces of the dummy gates. Further, the method also includes performing a post-treatment process using oxygen-contained de-ionized water on the planarized dielectric layer to eliminate the plurality of voids formed in the dielectric layer; removing the dummy gates to form trenches; and forming a high-K metal gate structure in each of the trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field-effct transistors","description":"A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the semiconductor substrate. The method also include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608061","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608061","citation_suggestion":"Patentable. \"Fin field-effct transistors\" (US-9608061). https://patentable.app/patents/US-9608061","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608061","json":"https://patentable.app/api/llm-context/US-9608061","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:24.583Z"}