{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608068","patent":{"patent_number":"US-9608068","title":"Substrate with strained and relaxed silicon regions","assignee":null,"inventors":[],"filing_date":"2015-08-05T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A method is provided for forming an integrated circuit. A trench is formed in a substrate. Subsequently, a silicon-germanium feature is formed in the trench, and an etch stop layer is formed on the substrate and on the silicon-germanium feature. Lastly, a silicon device layer is formed on the etch stop layer. The silicon device layer has a tensily-strained region overlying the silicon-germanium feature. Regions of the silicon device layer not overlying the silicon-germanium feature are less strained than the tensily-strained region. The tensily-strained region of the silicon device layer may be further processed into channel features in n-type field effect transistors with improved charge carrier mobilities and device drive currents."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Substrate with strained and relaxed silicon regions","description":"A method is provided for forming an integrated circuit. A trench is formed in a substrate. Subsequently, a silicon-germanium feature is formed in the trench, and an etch stop layer is formed on the su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608068","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608068","citation_suggestion":"Patentable. \"Substrate with strained and relaxed silicon regions\" (US-9608068). https://patentable.app/patents/US-9608068","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608068","json":"https://patentable.app/api/llm-context/US-9608068","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:14:51.726Z"}