{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608070","patent":{"patent_number":"US-9608070","title":"Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-04-27T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel formed in the body region, and the gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction, the body region being adjacent to the source region and the drain region. The semiconductor device further comprises a source contact and a body contact, the source contact being electrically connected to a source terminal, the body contact being electrically connected to the source contact and to the body region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device","description":"A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608070","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608070","citation_suggestion":"Patentable. \"Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device\" (US-9608070). https://patentable.app/patents/US-9608070","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608070","json":"https://patentable.app/api/llm-context/US-9608070","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:13:21.992Z"}