{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608073","patent":{"patent_number":"US-9608073","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-11-04T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"Provided is a semiconductor device comprising: a first conductivity type base layer having a MOS gate structure formed on its front surface side; a second conductivity type first collector layer formed on a rear surface side of the base layer; a second conductivity type second collector layer formed on a rear surface side of the first collector layer with a material the same with that of the base layer, the second collector layer formed to be thinner than the first collector layer and having a higher impurity concentration than that of the first collector layer; a collector electrode formed on a rear surface side of the second collector layer; and a second conductivity type separation layer surrounding the MOS gate structure on a front surface side of the base layer and formed from a front surface of the base layer to a front surface of the first collector layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"Provided is a semiconductor device comprising: a first conductivity type base layer having a MOS gate structure formed on its front surface side; a second conductivity type first collector layer forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608073","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608073","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-9608073). https://patentable.app/patents/US-9608073","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608073","json":"https://patentable.app/api/llm-context/US-9608073","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:36:03.750Z"}