{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608075","patent":{"patent_number":"US-9608075","title":"III-nitride semiconductor device with doped epi structures","assignee":null,"inventors":[],"filing_date":"2016-06-03T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A compound semiconductor device includes a first III-nitride buffer layer doped with carbon and/or iron, a second III-nitride buffer layer above the first III-nitride buffer layer and doped with carbon and/or iron, a first III-nitride device layer above the second III-nitride buffer layer, and a second III-nitride device layer above the first III-nitride device layer and having a different band gap than the first III-nitride device layer. A two-dimensional charge carrier gas arises along an interface between the first and second III-nitride device layers. The first III-nitride buffer layer has an average doping concentration of carbon and/or iron which is greater than that of the second III-nitride buffer layer. The second III-nitride buffer layer has an average doping concentration of carbon and/or iron which is comparable to or greater than that of the first III-nitride device layer. A method of manufacturing the compound semiconductor device is described."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III-nitride semiconductor device with doped epi structures","description":"A compound semiconductor device includes a first III-nitride buffer layer doped with carbon and/or iron, a second III-nitride buffer layer above the first III-nitride buffer layer and doped with carbo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608075","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608075","citation_suggestion":"Patentable. \"III-nitride semiconductor device with doped epi structures\" (US-9608075). https://patentable.app/patents/US-9608075","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608075","json":"https://patentable.app/api/llm-context/US-9608075","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:27:50.853Z"}