{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608079","patent":{"patent_number":"US-9608079","title":"Semiconductor device having reduced drain-to-source capacitance","assignee":null,"inventors":[],"filing_date":"2016-01-07T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a source finger electrode coupled to a source region in a semiconductor die, a drain finger electrode coupled to a drain region in the semiconductor die, where the source finger electrode includes at least one isolated segment and a main segment having a first portion and a second portion narrower than the first portion, whereby the source finger electrode reduces a drain-to-source capacitance of the semiconductor device. A common source rail is electrically coupled to the at least one isolated segment and the main segment of the source finger electrode. The drain finger electrode includes at least one isolated segment and a main segment having a first portion and a second portion narrower than the first portion. A common drain rail is electrically coupled to the at least one isolated segment and the main segment of the drain finger electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having reduced drain-to-source capacitance","description":"A semiconductor device includes a source finger electrode coupled to a source region in a semiconductor die, a drain finger electrode coupled to a drain region in the semiconductor die, where the sour","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608079","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608079","citation_suggestion":"Patentable. \"Semiconductor device having reduced drain-to-source capacitance\" (US-9608079). https://patentable.app/patents/US-9608079","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608079","json":"https://patentable.app/api/llm-context/US-9608079","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:45.389Z"}