{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608089","patent":{"patent_number":"US-9608089","title":"Method of manufacturing thin-film transistor substrate","assignee":null,"inventors":[],"filing_date":"2016-02-29T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing thin-film transistor substrate","description":"Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608089","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608089","citation_suggestion":"Patentable. \"Method of manufacturing thin-film transistor substrate\" (US-9608089). https://patentable.app/patents/US-9608089","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608089","json":"https://patentable.app/api/llm-context/US-9608089","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:36:07.369Z"}