{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608107","patent":{"patent_number":"US-9608107","title":"Method and apparatus for MOS device with doped region","assignee":null,"inventors":[],"filing_date":"2014-02-27T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. The device may also include a drain region, a source region, and a body region, where the source and body regions may operate in different voltages. Further, the device may include a first doped region having a second conductivity type, the first doped region disposed between the source region and the doped well; and a second doped region having the first conductivity type and disposed under the source region. The device may include a third doped region having the second conductivity type and disposed in the doped well; and a fourth doped region disposed above the third doped region, the fourth doped region having the first conductivity type. Additionally, the device may include a gate and a field plate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus for MOS device with doped region","description":"A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. The device may also include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608107","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608107","citation_suggestion":"Patentable. \"Method and apparatus for MOS device with doped region\" (US-9608107). https://patentable.app/patents/US-9608107","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608107","json":"https://patentable.app/api/llm-context/US-9608107","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:24:08.322Z"}