{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608110","patent":{"patent_number":"US-9608110","title":"Methods of forming a semiconductor circuit element and semiconductor circuit element","assignee":null,"inventors":[],"filing_date":"2015-07-29T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"The present disclosure provides methods of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element includes a first semiconductor device with a first gate structure disposed over a first active region of a semiconductor substrate and a second semiconductor device with a second gate structure disposed over a second active region of the semiconductor substrate, the first gate structure comprising a ferroelectric material buried into the first active region before a gate electrode material is formed on the ferroelectric material and the second gate structure comprising a high-k material different from the ferroelectric material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a semiconductor circuit element and semiconductor circuit element","description":"The present disclosure provides methods of forming a semiconductor circuit element and a semiconductor circuit element, wherein the semiconductor circuit element includes a first semiconductor device ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608110","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608110","citation_suggestion":"Patentable. \"Methods of forming a semiconductor circuit element and semiconductor circuit element\" (US-9608110). https://patentable.app/patents/US-9608110","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608110","json":"https://patentable.app/api/llm-context/US-9608110","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:01:17.801Z"}