{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9608146","patent":{"patent_number":"US-9608146","title":"Method for fabrication of copper-indium gallium oxide and chalcogenide thin films","assignee":null,"inventors":[],"filing_date":"2015-04-09T00:00:00.000Z","publication_date":"2017-03-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabrication of copper-indium gallium oxide and chalcogenide thin films","description":"A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9608146","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9608146","citation_suggestion":"Patentable. \"Method for fabrication of copper-indium gallium oxide and chalcogenide thin films\" (US-9608146). https://patentable.app/patents/US-9608146","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9608146","json":"https://patentable.app/api/llm-context/US-9608146","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:02.849Z"}