{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9611567","patent":{"patent_number":"US-9611567","title":"Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact","assignee":null,"inventors":[],"filing_date":"2014-02-25T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided is a method for controlling a donor concentration in a Ga2O3-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a Ga2O3-based single crystal body and an electrode. A donor concentration in a Ga2O3-based single crystal body is controlled by a method which includes a step wherein Si, which serves as a donor impurity, is introduced into the Ga2O3-based single crystal body by an ion implantation method at an implantation concentration of 1×1020 cm−3 or less, so that a donor impurity implanted region is formed in the Ga2O3-based single crystal body, the donor impurity implanted region having a higher donor impurity concentration than the regions into which Si is not implanted, and a step wherein Si in the donor impurity implanted region is activated by annealing, so that a high donor concentration region is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact","description":"Provided is a method for controlling a donor concentration in a Ga2O3-based single crystal body. In addition, an ohmic contact having a low resistance is formed between a Ga2O3-based single crystal bo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9611567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9611567","citation_suggestion":"Patentable. \"Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contact\" (US-9611567). https://patentable.app/patents/US-9611567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9611567","json":"https://patentable.app/api/llm-context/US-9611567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:59:15.918Z"}