{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613693","patent":{"patent_number":"US-9613693","title":"Methods for setting a resistance of programmable resistance memory cells and devices including the same","assignee":null,"inventors":[],"filing_date":"2015-10-29T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A method can include applying a first electric field to a plurality of memory elements that are programmable between at least two different resistance states; verifying whether the memory elements have a resistance outside of a first limit; for memory elements that are not outside of the first limit, applying a second electric field of a same direction as the first electric field, and not applying the second electric field to those memory elements that are outside the first limit; and verifying whether the memory elements receiving the second electric field have a resistance outside of a second limit; wherein the second limit is between the first limit and a read limit, where a memory element having a resistance below the read limit is determined to store one data value, and a memory element having a resistance above the read limit is determined to store another data value."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for setting a resistance of programmable resistance memory cells and devices including the same","description":"A method can include applying a first electric field to a plurality of memory elements that are programmable between at least two different resistance states; verifying whether the memory elements hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613693","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613693","citation_suggestion":"Patentable. \"Methods for setting a resistance of programmable resistance memory cells and devices including the same\" (US-9613693). https://patentable.app/patents/US-9613693","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613693","json":"https://patentable.app/api/llm-context/US-9613693","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:56.548Z"}