{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613809","patent":{"patent_number":"US-9613809","title":"Method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-01-17T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first mask layer is formed in contact with a first main surface of the silicon carbide substrate. The first mask layer includes a first layer disposed in contact with the first main surface, an etching stop layer disposed in contact with the first layer and made of a material different from that for the first layer, and a second layer disposed in contact with a surface of the etching stop layer opposite to the surface in contact with the first layer. A recess is formed in the first mask layer by etching the second layer and the etching stop layer. A first impurity region is formed in the silicon carbide substrate using the first mask layer with the recess. The first mask layer does not include a metallic element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide semiconductor device","description":"A method of manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first mask layer is formed in contact with a first main surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613809","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613809","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide semiconductor device\" (US-9613809). https://patentable.app/patents/US-9613809","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613809","json":"https://patentable.app/api/llm-context/US-9613809","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:49:10.148Z"}