{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613863","patent":{"patent_number":"US-9613863","title":"Method for forming electroless metal through via","assignee":null,"inventors":[],"filing_date":"2016-02-10T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of making a substrate-through metal via having a high aspect ratio, in a semiconductor substrate, and a metal pattern on the substrate surface, includes providing a semiconductor substrate (wafer) and depositing poly-silicon on the substrate. The poly-silicon on the substrate surface is patterned by etching away unwanted portions. Then, Ni is selectively deposited on the poly-silicon by an electroless process. A via hole is made through the substrate, wherein the walls in the hole is subjected to the same processing as above. Cu is deposited on the Ni by a plating process. Line widths and spacings <10 μm are provided on both sides of the wafer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming electroless metal through via","description":"A method of making a substrate-through metal via having a high aspect ratio, in a semiconductor substrate, and a metal pattern on the substrate surface, includes providing a semiconductor substrate (w","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613863","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613863","citation_suggestion":"Patentable. \"Method for forming electroless metal through via\" (US-9613863). https://patentable.app/patents/US-9613863","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613863","json":"https://patentable.app/api/llm-context/US-9613863","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:28.352Z"}