{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613868","patent":{"patent_number":"US-9613868","title":"Fin field-effect transistors and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2015-08-27T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for forming FinFETs includes, sequentially, providing a substrate; forming a plurality of fins on a surface of the substrate; forming a gate structure overlying on at least one of the plurality of fins; forming a barrier layer covering top and side surfaces of the gate structures, and top and side surfaces of the plurality of fins; performing a radical oxidation process to convert a top portion of the barrier layer to a passive layer to form a remaining barrier layer and to cause the top surfaces of the fins to be flat after subsequent etching processes; performing an etch-back process on the passive layer to form passive sidewalls on side surfaces of the portions of the remaining barrier on the side surfaces of the fins; and removing portions of the remaining barrier layer on the top surfaces of the fins by a wet etching process using the passive sidewalls as an etching mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field-effect transistors and fabrication methods thereof","description":"A method for forming FinFETs includes, sequentially, providing a substrate; forming a plurality of fins on a surface of the substrate; forming a gate structure overlying on at least one of the plurali","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613868","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613868","citation_suggestion":"Patentable. \"Fin field-effect transistors and fabrication methods thereof\" (US-9613868). https://patentable.app/patents/US-9613868","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613868","json":"https://patentable.app/api/llm-context/US-9613868","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:12.715Z"}