{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613870","patent":{"patent_number":"US-9613870","title":"Gate stack formed with interrupted deposition processes and laser annealing","assignee":null,"inventors":[],"filing_date":"2015-06-30T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate stack formed with interrupted deposition processes and laser annealing","description":"Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613870","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613870","citation_suggestion":"Patentable. \"Gate stack formed with interrupted deposition processes and laser annealing\" (US-9613870). https://patentable.app/patents/US-9613870","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613870","json":"https://patentable.app/api/llm-context/US-9613870","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:25:07.743Z"}