{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613873","patent":{"patent_number":"US-9613873","title":"Nanowire semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-12-22T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A method for forming a nanowire device comprises depositing a hard mask on portions of a silicon substrate having a <110> orientation wherein the hard mask is oriented in the <112> direction, etching the silicon substrate to form a mandrel having (111) faceted sidewalls; forming a layer of insulator material on the substrate; forming a sacrificial stack comprising alternating layers of sacrificial material and dielectric material disposed on the layer of insulator material and adjacent to the mandrel; patterning and etching the sacrificial stack to form a modified sacrificial stack adjacent to the mandrel and extending from the mandrel; removing the sacrificial material from the modified sacrificial stack to form growth channels; epitaxially forming semiconductor in the growth channels; and etching the semiconductor to align with the end of the growth channels and form a semiconductor stack comprising alternating layers of dielectric material and semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanowire semiconductor device","description":"A method for forming a nanowire device comprises depositing a hard mask on portions of a silicon substrate having a <110> orientation wherein the hard mask is oriented in the <112> direction, etching ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613873","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613873","citation_suggestion":"Patentable. \"Nanowire semiconductor device\" (US-9613873). https://patentable.app/patents/US-9613873","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613873","json":"https://patentable.app/api/llm-context/US-9613873","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:17:54.427Z"}