{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613880","patent":{"patent_number":"US-9613880","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-12-03T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor structure includes: providing a substrate with a dielectric layer and a passivation layer formed on the substrate; forming a via through the dielectric layer and exposing the substrate; forming a first conductive layer to fill the via with a top surface of the first conductive layer leveled with a top surface of the passivation layer; forming a patterned layer with an opening on the passivation layer. The opening is located above the first conductive layer with a dimension larger than the dimension of the via. The method also includes forming a trench in the dielectric layer; forming a second conductive layer to fill the trench and to electrically connect to the first conductive layer; then removing a portion of the second conductive layer, the patterned layer, and the passivation layer to make a top surface of the second conductive layer level with a top surface of the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"A method for fabricating a semiconductor structure includes: providing a substrate with a dielectric layer and a passivation layer formed on the substrate; forming a via through the dielectric layer a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613880","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613880","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-9613880). https://patentable.app/patents/US-9613880","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613880","json":"https://patentable.app/api/llm-context/US-9613880","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:22:15.047Z"}