{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613900","patent":{"patent_number":"US-9613900","title":"Nanoscale interconnect structure","assignee":null,"inventors":[],"filing_date":"2016-02-01T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"An interconnect structure includes a first dielectric material having an undercut region located at an upper surface thereof. A first conductive structure is located above a first area of the undercut region. The first conductive structure comprises a first conductive metal portion having a diffusion barrier portion located on one sidewall surface of the first conductive metal portion and having a metal liner located on another sidewall surface and a bottom surface of the first conductive metal portion. A second conductive structure is located above a second area of the undercut region. The second conductive structure comprises a second conductive material portion having a diffusion barrier portion located on one sidewall surface of the second conductive material portion and having a metal liner located on another sidewall surface and a bottom surface of the second conductive metal portion. A gap is located between the first and second conductive structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nanoscale interconnect structure","description":"An interconnect structure includes a first dielectric material having an undercut region located at an upper surface thereof. A first conductive structure is located above a first area of the undercut","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613900","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613900","citation_suggestion":"Patentable. \"Nanoscale interconnect structure\" (US-9613900). https://patentable.app/patents/US-9613900","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613900","json":"https://patentable.app/api/llm-context/US-9613900","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:41.007Z"}