{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613903","patent":{"patent_number":"US-9613903","title":"Fine line space resolution lithography structure for integrated circuit features using double patterning technology","assignee":null,"inventors":[],"filing_date":"2015-11-30T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A hard mask is disposed over a base material, and an I-shaped first opening is disposed in the hard mask. The first opening includes two parallel portions and a connecting portion interconnecting the two parallel portions. Spacers are formed on sidewalls of the first opening. The spacers fill an entirety of the connecting portion, wherein a center portion of each of the two parallel portions is unfilled by the spacers. The hard mask is etched to remove a portion of the hard mask and to form a second opening, wherein the second opening is between the two parallel portions of the first opening. The second opening is spaced apart from the two parallel portions of the first opening by the spacers. The first opening and the second opening are then extended down into the base material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fine line space resolution lithography structure for integrated circuit features using double patterning technology","description":"A hard mask is disposed over a base material, and an I-shaped first opening is disposed in the hard mask. The first opening includes two parallel portions and a connecting portion interconnecting the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613903","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613903","citation_suggestion":"Patentable. \"Fine line space resolution lithography structure for integrated circuit features using double patterning technology\" (US-9613903). https://patentable.app/patents/US-9613903","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613903","json":"https://patentable.app/api/llm-context/US-9613903","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:01.220Z"}