{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613908","patent":{"patent_number":"US-9613908","title":"Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications","assignee":null,"inventors":[],"filing_date":"2015-11-17T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications","description":"Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a pro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613908","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613908","citation_suggestion":"Patentable. \"Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications\" (US-9613908). https://patentable.app/patents/US-9613908","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613908","json":"https://patentable.app/api/llm-context/US-9613908","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:12.297Z"}