{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613945","patent":{"patent_number":"US-9613945","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-08-09T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A diffusion diode including a p+ diffusion region, a p-type diffusion region, and an n+ diffusion region is formed in the front surface of a semiconductor substrate. A polysilicon diode including a p+ layer and an n+ layer is formed on top of a local insulating film formed on the front surface of the semiconductor substrate and faces the diffusion diode in the depth direction. The diffusion diode and the polysilicon diode are reverse-connected by electrically connecting the n+ diffusion region to the n+ layer, thereby forming a lateral protection device. The p+ layer and p+ diffusion region are respectively electrically connected to a high voltage first terminal and a low voltage second terminal of the lateral protection device. The polysilicon diode blocks a forward current generated in the diffusion diode when the electric potential of the first terminal becomes lower than the electric potential of the second terminal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"A diffusion diode including a p+ diffusion region, a p-type diffusion region, and an n+ diffusion region is formed in the front surface of a semiconductor substrate. A polysilicon diode including a p+","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613945","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613945","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-9613945). https://patentable.app/patents/US-9613945","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613945","json":"https://patentable.app/api/llm-context/US-9613945","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:40:37.570Z"}