{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613954","patent":{"patent_number":"US-9613954","title":"Selective removal of semiconductor fins","assignee":null,"inventors":[],"filing_date":"2014-07-08T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and patterned such that sidewalls of an opening in the photoresist layer are parallel to the lengthwise direction of the semiconductor fins, and are asymmetrically laterally offset from a lengthwise direction passing through the center of mass of a semiconductor fin to be subsequently removed. An angled ion implantation is performed to convert a top portion of dielectric material liner into a compound material portion. The compound material portion is removed selective to the remaining dielectric material liner, and the physically exposed semiconductor fin can be removed by an etch or converted into a dielectric material portion by a conversion process. The dielectric material liner can be removed after removal of the semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective removal of semiconductor fins","description":"An array of semiconductor fins is formed on a top surface of a substrate. A dielectric material liner is formed on the surfaces of the array of semiconductor fins. A photoresist layer is applied and p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613954","citation_suggestion":"Patentable. \"Selective removal of semiconductor fins\" (US-9613954). https://patentable.app/patents/US-9613954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613954","json":"https://patentable.app/api/llm-context/US-9613954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:48:40.028Z"}