{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613956","patent":{"patent_number":"US-9613956","title":"Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide","assignee":null,"inventors":[],"filing_date":"2016-06-15T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A technique relates to punchthrough stop (PTS) doping in bulk fin field effect transistors. Fins are formed on a substrate, and each pair of the fins has a fin pitch. Each of the fins has an undoped fin channel and a punchthrough stop doping region underneath the undoped fin channel. A narrow shallow trench isolation trench is formed between the fin pitch of the fins. A wide shallow trench isolation trench is formed at an outside edge of the fins. A doped layer fills the narrow shallow trench isolation trench and the wide shallow trench isolation trench. A vertical thickness of the doped layer in the narrow shallow trench isolation trench is greater than a vertical thickness of the wide shallow trench isolation trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide","description":"A technique relates to punchthrough stop (PTS) doping in bulk fin field effect transistors. Fins are formed on a substrate, and each pair of the fins has a fin pitch. Each of the fins has an undoped f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613956","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613956","citation_suggestion":"Patentable. \"Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide\" (US-9613956). https://patentable.app/patents/US-9613956","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613956","json":"https://patentable.app/api/llm-context/US-9613956","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:05:43.816Z"}