{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613963","patent":{"patent_number":"US-9613963","title":"Dual material finFET on single substrate","assignee":null,"inventors":[],"filing_date":"2016-07-20T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor device and a method for fabricating the device are provided. The semiconductor device has a substrate having a first device region and a second device region. A p-type fin field effect transistor is formed in the first device region. The p-type fin field effect transistor has a first fin structure constituted of a first semiconductor material. An n-type fin field effect transistor is formed in the second device region. The n-type fin field effect transistor has a second fin structure constituted of a second semiconductor material that is different than the first semiconductor material. To fabricate the semiconductor device, a substrate having an active layer present on a dielectric layer is provided. The active layer is etched to provide a first region having the first fin structure and a second region having a mandrel structure. The second fin structure is formed on a sidewall of the mandrel structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual material finFET on single substrate","description":"A semiconductor device and a method for fabricating the device are provided. The semiconductor device has a substrate having a first device region and a second device region. A p-type fin field effect","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613963","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613963","citation_suggestion":"Patentable. \"Dual material finFET on single substrate\" (US-9613963). https://patentable.app/patents/US-9613963","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613963","json":"https://patentable.app/api/llm-context/US-9613963","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:42.622Z"}