{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9613981","patent":{"patent_number":"US-9613981","title":"Vertical channel-type 3D semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-07-19T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A vertical channel-type 3D semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the method includes depositing alternating insulating and electrode layers on a substrate to form a multi-layer film. The method further includes etching the film to the substrate to form through-holes, each of which defines a channel region. The method further includes depositing barrier, storage, and tunnel layers in sequence on inner walls of through-holes to form gate stacks. The method further includes depositing and incompletely filling a channel material on a surface of the tunnel layer of gate stacks to form a hollow channels. The method further includes forming drains in contact hole regions for bit-line connection in top portions of the hollow channels. The method further includes forming sources in contact regions between the through-holes and the substrate in bottom portions of the hollow channels."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical channel-type 3D semiconductor memory device and method for manufacturing the same","description":"A vertical channel-type 3D semiconductor memory device and a method for manufacturing the same are disclosed. In one aspect, the method includes depositing alternating insulating and electrode layers ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9613981","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9613981","citation_suggestion":"Patentable. \"Vertical channel-type 3D semiconductor memory device and method for manufacturing the same\" (US-9613981). https://patentable.app/patents/US-9613981","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9613981","json":"https://patentable.app/api/llm-context/US-9613981","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:15.260Z"}