{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614031","patent":{"patent_number":"US-9614031","title":"Methods for forming a high-voltage super junction by trench and epitaxial doping","assignee":null,"inventors":[],"filing_date":"2015-07-23T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming a high-voltage super junction by trench and epitaxial doping","description":"A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighbori","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614031","citation_suggestion":"Patentable. \"Methods for forming a high-voltage super junction by trench and epitaxial doping\" (US-9614031). https://patentable.app/patents/US-9614031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614031","json":"https://patentable.app/api/llm-context/US-9614031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:13:40.305Z"}