{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614043","patent":{"patent_number":"US-9614043","title":"MOSFET termination trench","assignee":null,"inventors":[],"filing_date":"2012-02-09T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method, in one embodiment, can include forming a core trench and a termination trench in a substrate. The termination trench is wider than the core trench. In addition, a first oxide can be deposited that fills the core trench and lines the sidewalls and bottom of the termination trench. A first polysilicon can be deposited into the termination trench. A second oxide can be deposited above the first polysilicon. A mask can be deposited above the second oxide and the termination trench. The first oxide can be removed from the core trench. A third oxide can be deposited that lines the sidewalls and bottom of the core trench. The first oxide within the termination trench is thicker than the third oxide within the core trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MOSFET termination trench","description":"A method, in one embodiment, can include forming a core trench and a termination trench in a substrate. The termination trench is wider than the core trench. In addition, a first oxide can be deposite","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614043","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614043","citation_suggestion":"Patentable. \"MOSFET termination trench\" (US-9614043). https://patentable.app/patents/US-9614043","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614043","json":"https://patentable.app/api/llm-context/US-9614043","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:08:05.831Z"}