{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614051","patent":{"patent_number":"US-9614051","title":"Semiconductor devices and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-05-20T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for fabricating a semiconductor device includes providing a substrate; and forming at least one dummy gate structure on the substrate. The method also includes forming doping regions in the substrate at both sides of the dummy gate structure; forming an interlayer dielectric layer on the d the dummy gate structure; performing a first step thermal annealing process to increase a density of the interlayer dielectric layer; and activating doping ions for a first time without an excess diffusion of the doping ions in the doping region; and removing the dummy gate structure to expose the surface of the substrate to form a trench in the annealed interlayer dielectric layer. Further, the method also includes forming a gate dielectric layer on the surface of the substrate on bottom of the trench; and performing a second step thermal annealing process to activate the doping ions for a second time."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and fabrication method thereof","description":"A method for fabricating a semiconductor device includes providing a substrate; and forming at least one dummy gate structure on the substrate. The method also includes forming doping regions in the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614051","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614051","citation_suggestion":"Patentable. \"Semiconductor devices and fabrication method thereof\" (US-9614051). https://patentable.app/patents/US-9614051","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614051","json":"https://patentable.app/api/llm-context/US-9614051","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:39:53.970Z"}