{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614066","patent":{"patent_number":"US-9614066","title":"Semiconductor device provided with an IE type trench IGBT","assignee":null,"inventors":[],"filing_date":"2016-04-26T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":2,"abstract":"A switching loss is prevented from being deteriorated by suppressing increase in a gate capacitance due to a cell shrink of an IE type trench gate IGBT. A cell formation region is configured of a linear active cell region, a linear hole collector cell region, and a linear inactive cell region between them. Then, upper surfaces of the third and fourth linear trench gate electrodes which are formed so as to sandwich both sides of the linear hole collector cell region and electrically connected to an emitter electrode are positioned to be lower than upper surfaces of the first and second linear trench gate electrodes which are formed so as to sandwich both sides of the linear active cell region and electrically connected to a gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device provided with an IE type trench IGBT","description":"A switching loss is prevented from being deteriorated by suppressing increase in a gate capacitance due to a cell shrink of an IE type trench gate IGBT. A cell formation region is configured of a line","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614066","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614066","citation_suggestion":"Patentable. \"Semiconductor device provided with an IE type trench IGBT\" (US-9614066). https://patentable.app/patents/US-9614066","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614066","json":"https://patentable.app/api/llm-context/US-9614066","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:11:12.162Z"}