{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614082","patent":{"patent_number":"US-9614082","title":"Al-poor barrier for InGaAs semiconductor structure","assignee":null,"inventors":[],"filing_date":"2016-07-13T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a III-V structure abutting the silicon monocrystalline substrate. The semiconductor structure includes an InaGabAs structure overlaying the III-V structure, where a is from 0.40 to 1, b from 0 to 0.60, and a+b equal to 1.00. The III-V structure has a top surface facing away from the silicon substrate. The top surface is GagXxPpSbsZz, where X includes one or more group III elements other than Ga and Z is one or more group V elements other than P or Sb. g is from 0.80 to 1.00, x is from 0 to 0.20, z is from 0 to 0.30, p is from 0.10 to 0.55, and s is from 0.50 to 0.80, g+x is equal to 1.00 and p+s+z is equal to 1.00."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Al-poor barrier for InGaAs semiconductor structure","description":"The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a III-V structure abutting the silicon monocrystalline substr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614082","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614082","citation_suggestion":"Patentable. \"Al-poor barrier for InGaAs semiconductor structure\" (US-9614082). https://patentable.app/patents/US-9614082","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614082","json":"https://patentable.app/api/llm-context/US-9614082","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:17:17.572Z"}