{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614086","patent":{"patent_number":"US-9614086","title":"Conformal source and drain contacts for multi-gate field effect transistors","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes a fin having a first semiconductor material. The fin includes a source/drain (S/D) region and a channel region. The S/D region provides a top surface and two sidewall surfaces. A width of the S/D region is smaller than a width of the channel region. The semiconductor device further includes a semiconductor film over the S/D region and having a doped second semiconductor material. The semiconductor film provides a top surface and two sidewall surfaces that are substantially parallel to the top and two sidewall surfaces of the S/D region respectively. The semiconductor device further includes a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Conformal source and drain contacts for multi-gate field effect transistors","description":"A semiconductor device includes a fin having a first semiconductor material. The fin includes a source/drain (S/D) region and a channel region. The S/D region provides a top surface and two sidewall s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614086","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614086","citation_suggestion":"Patentable. \"Conformal source and drain contacts for multi-gate field effect transistors\" (US-9614086). https://patentable.app/patents/US-9614086","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614086","json":"https://patentable.app/api/llm-context/US-9614086","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:32:27.467Z"}