{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614087","patent":{"patent_number":"US-9614087","title":"Strained vertical field-effect transistor (FET) and method of forming the same","assignee":null,"inventors":[],"filing_date":"2016-05-17T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a bottom source/drain region on the first semiconductor layer, forming a second semiconductor layer on the bottom source/drain region, patterning the second semiconductor layer into a plurality of fins extending from the bottom source/drain region vertically with respect to the substrate, forming a gate structure around the plurality of fins, forming a top source/drain region on each of the plurality of fins, oxidizing the first semiconductor layer to form an oxide layer in place of the first semiconductor layer, wherein a volume of the oxide layer is larger than a volume of the first semiconductor layer prior to the oxidation, and producing a strain in each of the plurality of fins due to the larger volume of the oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Strained vertical field-effect transistor (FET) and method of forming the same","description":"A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a bottom source/drain region on the first semiconductor layer, forming a second s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614087","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614087","citation_suggestion":"Patentable. \"Strained vertical field-effect transistor (FET) and method of forming the same\" (US-9614087). https://patentable.app/patents/US-9614087","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614087","json":"https://patentable.app/api/llm-context/US-9614087","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:33:22.426Z"}