{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9614088","patent":{"patent_number":"US-9614088","title":"Metal gate structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2014-08-20T00:00:00.000Z","publication_date":"2017-04-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate including a first active region, a second active region and an isolation disposed between the first active region and the second active region; a plurality of gates disposed over the substrate and including a first gate extended over the first active region, the isolation and the second active region, and a second gate over the first active region and the second active region; and an inter-level dielectric (ILD) disposed over the substrate and surrounding the plurality of gates, wherein the second gate is configured not to conduct current flow and includes a first section disposed over the first active region and a second section disposed over the second active region, a portion of the ILD is disposed between the first section and the second section."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal gate structure and manufacturing method thereof","description":"A semiconductor structure includes a substrate including a first active region, a second active region and an isolation disposed between the first active region and the second active region; a plurali","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9614088","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9614088","citation_suggestion":"Patentable. \"Metal gate structure and manufacturing method thereof\" (US-9614088). https://patentable.app/patents/US-9614088","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9614088","json":"https://patentable.app/api/llm-context/US-9614088","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:40:21.637Z"}