{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620233","patent":{"patent_number":"US-9620233","title":"Word line ramping down scheme to purge residual electrons","assignee":null,"inventors":[],"filing_date":"2016-06-30T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":22,"abstract":"Techniques are disclosed for accurately sensing memory cells without having to wait for a voltage that creeps up on word line after a sensing operation to die down. In one aspect, a read pass voltage is discharged in a manner that purges residual electrons from a memory string channel after a sensing operation. A control circuit may begin to discharge the read pass voltage from memory cell control gates at different strategic times in order to provide a path for residual electrons to leave the channel. Because residual electrons have been purged from the channel, no or very few electrons will be trapped in shallow interface traps of the memory cell if the word line voltage does creep up following sensing. Thus, the word line voltage may still creep up after the sensing operation without changing a threshold voltage of the memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Word line ramping down scheme to purge residual electrons","description":"Techniques are disclosed for accurately sensing memory cells without having to wait for a voltage that creeps up on word line after a sensing operation to die down. In one aspect, a read pass voltage ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620233","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620233","citation_suggestion":"Patentable. \"Word line ramping down scheme to purge residual electrons\" (US-9620233). https://patentable.app/patents/US-9620233","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620233","json":"https://patentable.app/api/llm-context/US-9620233","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:16:47.296Z"}