{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620356","patent":{"patent_number":"US-9620356","title":"Process of selective epitaxial growth for void free gap fill","assignee":null,"inventors":[],"filing_date":"2015-10-29T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of depositing a epitaxial layer on the substrate includes supplying a gas mixture having a first ratio of a dichlorosilane gas to a chlorine containing gas into the processing chamber, altering the gas mixture to have a second ratio of the dichlorosilane gas to the chlorine containing gas into the processing chamber, maintaining a substrate temperature of between about 600 degrees Celsius and about 1000 degrees Celsius, and filling an opening formed in a substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process of selective epitaxial growth for void free gap fill","description":"Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film uniformity across the substrate are provided. In ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620356","citation_suggestion":"Patentable. \"Process of selective epitaxial growth for void free gap fill\" (US-9620356). https://patentable.app/patents/US-9620356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620356","json":"https://patentable.app/api/llm-context/US-9620356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:08:06.523Z"}