{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620362","patent":{"patent_number":"US-9620362","title":"Seed layer structure for growth of III-V materials on silicon","assignee":null,"inventors":[],"filing_date":"2015-04-29T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a structure and method of forming a GaN film on a Si substrate that includes an additional or second high temperature (HT) AlN seed layer, introduced for reducing the tensile stress of GaN on a Si substrate. The second HT AlN seed layer is disposed over a first HT AlN seed layer, and has a low V/III ratio compared to the first HT AlN seed layer. The second HT AlN seed layer has better lattice matching between Si and GaN and this reduces the tensile stress on GaN. The additional HT AlN seed layer further acts as a capping layer and helps annihilate or terminate threading dislocations (TDs) originating from a LT AlN seed layer. The second HT AlN seed layer also helps prevent Si diffusion from the substrate to the GaN film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Seed layer structure for growth of III-V materials on silicon","description":"The present disclosure relates to a structure and method of forming a GaN film on a Si substrate that includes an additional or second high temperature (HT) AlN seed layer, introduced for reducing the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620362","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620362","citation_suggestion":"Patentable. \"Seed layer structure for growth of III-V materials on silicon\" (US-9620362). https://patentable.app/patents/US-9620362","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620362","json":"https://patentable.app/api/llm-context/US-9620362","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:20:35.285Z"}