{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620364","patent":{"patent_number":"US-9620364","title":"Methods of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-05-19T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of manufacturing a semiconductor device is provided. The method includes forming a molding layer and a supporter layer on a semiconductor substrate, forming a multiple mask layer including a first mask layer and a second mask layer formed on the first mask layer, on the supporter layer. The first mask layer is formed of a material having an etch selectivity with respect to the molding layer and the second mask layer is formed of a material having an etch selectivity with respect to the supporter layer. The method includes forming a first mask pattern and a second mask pattern formed on the first mask pattern by patterning the multiple mask layer, etching the supporter layer by performing a first etching process using the second mask pattern as an etch mask, etching the molding layer, and forming a hole by performing a second etching process using the first mask pattern as an etch mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of manufacturing semiconductor device","description":"A method of manufacturing a semiconductor device is provided. The method includes forming a molding layer and a supporter layer on a semiconductor substrate, forming a multiple mask layer including a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620364","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620364","citation_suggestion":"Patentable. \"Methods of manufacturing semiconductor device\" (US-9620364). https://patentable.app/patents/US-9620364","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620364","json":"https://patentable.app/api/llm-context/US-9620364","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:20:30.779Z"}