{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620382","patent":{"patent_number":"US-9620382","title":"Reactor for plasma-based atomic layer etching of materials","assignee":null,"inventors":[],"filing_date":"2014-12-08T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"Plasma-based atomic layer etching of materials may be of benefit to various semiconductor manufacturing and related technologies. For example, plasma-based atomic layer etching of materials may be beneficial for adding and/or removing angstrom thick layers from a surface in advanced semiconductor manufacturing and related technologies that increasingly demand atomistic surface engineering. A method may include depositing a controlled amount of a chemical precursor on an unmodified surface layer of a substrate to create a chemical precursor layer and a modified surface layer. The method may also include selectively removing a portion of the chemical precursor layer, a portion of the modified surface layer and a controlled portion of the substrate. Further, the controlled portion may be removed to a depth ranging from about 1/10 of an angstrom to about 1 nm. Additionally, the deposition and selective removal may be performed under a plasma environment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reactor for plasma-based atomic layer etching of materials","description":"Plasma-based atomic layer etching of materials may be of benefit to various semiconductor manufacturing and related technologies. For example, plasma-based atomic layer etching of materials may be ben","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620382","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620382","citation_suggestion":"Patentable. \"Reactor for plasma-based atomic layer etching of materials\" (US-9620382). https://patentable.app/patents/US-9620382","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620382","json":"https://patentable.app/api/llm-context/US-9620382","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:57.802Z"}