{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620416","patent":{"patent_number":"US-9620416","title":"Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance","assignee":null,"inventors":[],"filing_date":"2015-11-18T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A method of forming a semiconductor device that includes providing a plurality of fin structures, wherein a surface of the fin structures has a first orientation for a diamond shaped epitaxial growth deposition surface. A first epitaxial semiconductor material having a diamond geometry is grown on the diamond shaped epitaxial growth surface. A blocking material is formed protecting a lower portion of the first epitaxial semiconductor material. An upper portion of the first epitaxial semiconductor material is removed to expose a second orientation surface of the first epitaxial semiconductor material for merged epitaxial semiconductor growth. A second epitaxial semiconductor material is epitaxially formed on the first epitaxial semiconductor material. The second epitaxial semiconductor material has a substantially planar upper surface and extends into direct contact with at least two adjacent fin structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance","description":"A method of forming a semiconductor device that includes providing a plurality of fin structures, wherein a surface of the fin structures has a first orientation for a diamond shaped epitaxial growth ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620416","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620416","citation_suggestion":"Patentable. \"Fin field effect transistor structure and method to form defect free merged source and drain epitaxy for low external resistance\" (US-9620416). https://patentable.app/patents/US-9620416","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620416","json":"https://patentable.app/api/llm-context/US-9620416","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:48:31.242Z"}