{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620453","patent":{"patent_number":"US-9620453","title":"Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof","assignee":null,"inventors":[],"filing_date":"2014-10-13T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor structure. An electroless deposition process is performed. The electroless deposition process removes a first portion of the layer of first metal from the semiconductor structure and deposits a first layer of a second metal over the semiconductor structure. An electroplating process is performed. The electroplating process deposits a second layer of the second metal over the first layer of second metal. A second portion of the layer of first metal remains in the semiconductor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof","description":"A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first metal is deposited over the semiconductor s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620453","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620453","citation_suggestion":"Patentable. \"Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal and method for the formation thereof\" (US-9620453). https://patentable.app/patents/US-9620453","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620453","json":"https://patentable.app/api/llm-context/US-9620453","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:40:40.721Z"}