{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620455","patent":{"patent_number":"US-9620455","title":"Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure","assignee":null,"inventors":[],"filing_date":"2010-06-24T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":24,"abstract":"A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface of the wafer. An insulating layer can be formed between the ACF and semiconductor die. The semiconductor wafer is singulated to separate the die. The semiconductor die is mounted to a temporary carrier with the ACF oriented to the carrier. The semiconductor die is forced against the carrier to compress the ACF under the bumps and form a low resistance electrical interconnect to the bumps. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The interconnect structure is electrically connected through the compressed ACF to the bumps. The ACF reduces shifting of the semiconductor die during encapsulation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure","description":"A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. An ACF is deposited over the bumps and active surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620455","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620455","citation_suggestion":"Patentable. \"Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure\" (US-9620455). https://patentable.app/patents/US-9620455","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620455","json":"https://patentable.app/api/llm-context/US-9620455","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:09:02.085Z"}