{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620479","patent":{"patent_number":"US-9620479","title":"3D bonded semiconductor structure with an embedded resistor","assignee":null,"inventors":[],"filing_date":"2016-06-30T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A first semiconductor structure including a first bonding oxide layer having a metal resistor structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of either the metal resistor structure or the metallic bonding structure. The nitrogen within the nitridized metallic region located in the upper portion of the metallic bonding structure is then selectively removed to restore the upper portion of the metallic bonding structure to its original composition. Bonding is then performed to form a dielectric bonding interface and a metallic bonding interface between."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D bonded semiconductor structure with an embedded resistor","description":"A first semiconductor structure including a first bonding oxide layer having a metal resistor structure embedded therein and a second semiconductor structure including a second bonding oxide layer hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620479","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620479","citation_suggestion":"Patentable. \"3D bonded semiconductor structure with an embedded resistor\" (US-9620479). https://patentable.app/patents/US-9620479","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620479","json":"https://patentable.app/api/llm-context/US-9620479","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:48:01.378Z"}