{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620499","patent":{"patent_number":"US-9620499","title":"Semiconductor device and method of manufacturing the semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-02-27T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A semiconductor device for restraining snapback is provided. The semiconductor device includes IGBT and diode regions. In a view of n-type impurity concentration distribution along a direction from a front surface to a rear surface, a local minimum value of an n-type impurity concentration is located at a border between cathode and buffer regions. A local maximum value of n-type impurity concentration is located in the buffer region. At least one of the buffer and cathode regions includes a crystal defect region having crystal defects in a higher concentration than a region therearound. A peak of a crystal defect concentration in a view of crystal defect concentration distribution along the direction from the front surface to the rear surface is located in a region on the rear surface side with respect to a specific position having the n-type impurity concentration which is a half of the local maximum value."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the semiconductor device","description":"A semiconductor device for restraining snapback is provided. The semiconductor device includes IGBT and diode regions. In a view of n-type impurity concentration distribution along a direction from a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620499","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620499","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the semiconductor device\" (US-9620499). https://patentable.app/patents/US-9620499","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620499","json":"https://patentable.app/api/llm-context/US-9620499","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:34:25.896Z"}