{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620506","patent":{"patent_number":"US-9620506","title":"Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region","assignee":null,"inventors":[],"filing_date":"2013-05-31T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region","description":"An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620506","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620506","citation_suggestion":"Patentable. \"Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region\" (US-9620506). https://patentable.app/patents/US-9620506","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620506","json":"https://patentable.app/api/llm-context/US-9620506","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:39.206Z"}