{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620585","patent":{"patent_number":"US-9620585","title":"Termination for a stacked-gate super-junction MOSFET","assignee":null,"inventors":[],"filing_date":"2016-07-08T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"At least some illustrative device embodiments include a highly-doped n-type semiconductor substrate having a first epitaxial layer of a lightly-doped n-type semiconductor; and a second epitaxial layer of a lightly-doped p-type semiconductor to form a vertical diode with the first epitaxial layer. A termination structure near the outer edges of the device includes a termination well in the second epitaxial layer, the termination well being a moderately-doped n-type semiconductor so as to form a horizontal diode with the second epitaxial layer. The structure further includes an electric field barrier. The electric field barrier includes at least one vertical trench extending through the termination well into the first epitaxial layer and exposing a sidewall region. The sidewall region is doped via the sidewalls to be a moderately-doped p-type semiconductor. Also provided are sidewall layers of a moderately-doped n-type semiconductor, the sidewalls electrically coupling the termination well to the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Termination for a stacked-gate super-junction MOSFET","description":"At least some illustrative device embodiments include a highly-doped n-type semiconductor substrate having a first epitaxial layer of a lightly-doped n-type semiconductor; and a second epitaxial layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620585","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620585","citation_suggestion":"Patentable. \"Termination for a stacked-gate super-junction MOSFET\" (US-9620585). https://patentable.app/patents/US-9620585","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620585","json":"https://patentable.app/api/llm-context/US-9620585","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:46.991Z"}